BIDD05N60T

Bourns
652-BIDD05N60T
BIDD05N60T

Mfr.:

Description:
IGBTs IGBT Discrete 600V, 5A in TO-252

Datasheet:
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In Stock: 24,183

Stock:
24,183 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$2.10 $2.10
$1.35 $13.50
$0.585 $58.50
Full Reel (Order in multiples of 2500)
$0.562 $1,405.00
25,000 Quote
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Bourns
Product Category: IGBTs
RoHS:  
Si
TO-252-3
SMD/SMT
Single
600 V
1.5 V
- 30 V, 30 V
10 A
82 W
- 55 C
+ 150 C
BID
Reel
Cut Tape
MouseReel
Brand: Bourns
Continuous Collector Current Ic Max: 10 A
Gate-Emitter Leakage Current: 400 nA
Moisture Sensitive: Yes
Product Type: IGBT Transistors
Factory Pack Quantity: 2500
Subcategory: IGBTs
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Attributes selected: 0

Datasheet

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

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