+972 9 7783020

Part of the TTI Family of Specialists Contact Mouser (Tel-Aviv) +972 9 7783020 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXSA80N120L2-7TR

Name: IXYS IXSA80N120L2-7TR
Brand: IXYS
SKU: 747-IXSA80N120L2-7TR
Price: 12 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXSA80N120L2-7TR

Mfr. No:

IXSA80N120L2-7TR

Mfr.:

IXYS

Description:

SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSA80N120L2-7TR Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXSA80N120L2-7TR

In Stock: 760

Stock:: 760 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$12.00	$12.00
	$9.77	$97.70
	$7.65	$765.00
	$7.26	$3,630.00
Full Reel (Order in multiples of 800)
	$7.02	$5,616.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	79 A
Rds On - Drain-Source Resistance:	39 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	395 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Fall Time:	13.6 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	24.6 ns
Series:	IXSA80N120L2-7
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	28.6 ns
Typical Turn-On Delay Time:	15.4 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXSA80N120L2-7TR Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IXSA80N120L2-7 SiC MOSFET

IXYS IXSA80N120L2-7 SiC MOSFET is an industrial-grade, single-switch SiC MOSFET exhibiting power cycling characteristics and very fast, low-loss switching behavior. This MOSFET features low conduction losses, low gate drive power requirements, and low thermal management effort and is optimized for gate control. The IXSA80N120L2-7 SiC MOSFET is used for high-speed industrial switch-mode power supplies. This SiC MOSFET is ideal for solar inverters, switch-mode power supplies, UPS, motor drives, DC/DC converters, EV charging infrastructure, and induction heating.