IXYK85N120C4H1

IXYS
576-IXYK85N120C4H1
IXYK85N120C4H1

Mfr.:

Description:
IGBTs IXYK85N120C4H1

ECAD Model:
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In Stock: 977

Stock:
977 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$24.85 $24.85
$16.23 $162.30
$14.90 $1,490.00
$14.89 $7,445.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: IGBTs
RoHS:  
Si
TO-264-3
Through Hole
Single
1.2 kV
2 V
- 20 V, 20 V
220 A
1.15 kW
- 55 C
+ 175 C
Tube
Brand: IXYS
Continuous Collector Current Ic Max: 220 A
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 25
Subcategory: IGBTs
Tradename: XPT
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

1200V Trench XPT™ IGBTs with Sonic Diodes

Littelfuse 1200V Trench XPT™ Insulated-gate Bipolar Transistors (IGBTs) with Sonic Diodes are developed using XPT thin-wafer technology and Trench IGBT processes. The transistors feature reduced thermal resistance and are optimized for low switching loss. Littelfuse 1200V Trench XPT IGBTs with Sonic Diodes offer a high current handling capacity, high power density, and an anti-parallel sonic diode. These Trench XPT transistors are ideal for power inverter, motor drive, power factor correction (PFC) circuit, and battery charger applications.

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