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BSG0811NDATMA1

Name: Infineon BSG0811NDATMA1
Brand: Infineon Technologies
SKU: 726-BSG0811NDATMA1
Price: 2.69 USD
Availability: InStock

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Mouser No:

726-BSG0811NDATMA1

Mfr. No:

BSG0811NDATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 15V-30V

Datasheet:

BSG0811NDATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BSG0811NDATMA1

In Stock: 1,494

Stock:: 1,494

Can Dispatch Immediately

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On Order:: 10,000

Expected 02/04/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.69	$2.69
	$1.78	$17.80
	$1.29	$129.00
	$1.07	$535.00
	$1.05	$2,625.00
Full Reel (Order in multiples of 5000)
	$0.869	$4,345.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

BSG0811ND

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$2.98

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TISON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	50 A, 50 A
Rds On - Drain-Source Resistance:	2.4 mOhms, 3.2 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	5.6 nC, 20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.5 W, 6.25 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	1.4 ns, 2.6 ns
Forward Transconductance - Min:	46 S, 90 S
Product Type:	MOSFETs
Rise Time:	4.3 ns, 4.7 ns
Series:	OptiMOS 5
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	4.3 ns, 8.8 ns
Typical Turn-On Delay Time:	4.3 ns, 5.6 ns
Part # Aliases:	BSG0811ND SP001075902
Unit Weight:	112.200 mg

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Filter Document:

Datasheet

BSG0811NDATMA1 Datasheet (PDF)

Application Notes

Other

Packaging:PG-TISON-8-4 | BSG0811NDATMA1 (PDF)

Product Catalogs

SPICE Models

Simulation Model OptiMOS™ Power MOSFET PSpice 25V N-Channel (Zip)

Technical Resources

Article Improving Power Density and Efficiency in Servers and Telecom PSD (PDF)

Test/Quality Data

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

USB-C Chargers & Adapters

Infineon Technologies offers tailor-made semiconductors that consider customers’ priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C™ source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery, and ESD protection devices.