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FS1150R08A8P3CHPSA1

Name: Infineon FS1150R08A8P3CHPSA1
Brand: Infineon Technologies
SKU: 726-FS1150R08A8P3CHP
Price: 575.92 USD
Availability: InStock

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Mouser No:

726-FS1150R08A8P3CHP

Mfr. No:

FS1150R08A8P3CHPSA1

Mfr.:

Infineon Technologies

Description:

Discrete Semiconductor Modules HybridPACK Drive G2 module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FS1150R08A8P3CHPSA1 Datasheet (PDF)

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Learn more about Infineon Technologies FS1150R08A8P3CHPSA1

In Stock: 3

Stock:: 3 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$575.92	$575.92
	$512.75	$6,153.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power Modules
Type:	Drive G2 Module
Technology:	SiC
Vf - Forward Voltage:	1.76 V
Vr - Reverse Voltage:	400 V
Mounting Style:	Press Fit
Package/Case:	DIP-7
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 V
Series:	HybridPACK
Packaging:	Tray
Brand:	Infineon Technologies
Configuration:	Sixpack
Fall Time:	91 ns
Id - Continuous Drain Current:	600 A
Pd - Power Dissipation:	1 kW
Product Type:	Discrete Semiconductor Modules
Rise Time:	50 ns
Factory Pack Quantity:	6
Subcategory:	Discrete and Power Modules
Typical Turn-Off Delay Time:	929 ns
Typical Turn-On Delay Time:	222 ns
Vds - Drain-Source Breakdown Voltage:	750 V
Vgs th - Gate-Source Threshold Voltage:	5.8 V
Part # Aliases:	FS1150R08A8P3C SP006071554

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Datasheet

FS1150R08A8P3CHPSA1 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

HybridPACK™ Drive G2 Modules

Infineon Technologies HybridPACK™ Drive G2 Modules are compact power modules designed for hybrid and electric vehicle traction. The Infineon Technologies G2 modules offer scalable performance levels using Si or SiC technologies and different chipsets, maintaining the same module size. Introduced in 2017 with silicon EDT2 technology, it was optimized for efficiency in real-world driving. In 2021, a CoolSiC™ version was introduced, offering higher cell density and better performance. In 2023, the second generation, HybridPACK Drive G2, was launched with EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET technologies, providing ease of use and integration options for sensors, enabling up to 300kW performance within 750V and 1200V classes.