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IMT40R015M2HXTMA1

Name: Infineon IMT40R015M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMT40R015M2HXTMA
Price: 11.5 USD
Availability: InStock

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Mouser No:

726-IMT40R015M2HXTMA

Mfr. No:

IMT40R015M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMT40R015M2HXTMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IMT40R015M2HXTMA1

In Stock: 1,276

Stock:: 1,276 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$11.50	$11.50
	$9.37	$93.70
	$7.81	$781.00
	$6.96	$3,480.00
	$6.95	$6,950.00
Full Reel (Order in multiples of 2000)
	$5.90	$11,800.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	400 V
Id - Continuous Drain Current:	111 A
Rds On - Drain-Source Resistance:	19.1 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	62 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	341 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	15.7 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	SiC
Type:	G2 MOSFET
Typical Turn-Off Delay Time:	26.5 ns
Typical Turn-On Delay Time:	13.9 ns
Part # Aliases:	IMT40R015M2H SP005915784

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Datasheet

IMT40R015M2HXTMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 400V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs are ideally suited for hard- and resonant-switching topologies. The Infineon 400V CoolSiC MOSFETs were specially developed for use in the AC/DC stage of AI server Power Supply Units (PSUs) and are also ideal for applications such as solar and energy storage systems. CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation.