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IPB085N15NM6ATMA1

Name: Infineon IPB085N15NM6ATMA1
Brand: Infineon Technologies
SKU: 726-IPB085N15NM6ATMA
Price: 3.13 USD
Availability: InStock

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Mouser No:

726-IPB085N15NM6ATMA

Mfr. No:

IPB085N15NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 6 power MOSFET 150 V normal level in DPAK 3-pin package

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IPB085N15NM6ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPB085N15NM6ATMA1

In Stock: 1,235

Stock:: 1,235 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$3.13	$3.13
	$2.03	$20.30
	$1.49	$149.00
	$1.25	$625.00
Full Reel (Order in multiples of 1000)
	$1.06	$1,060.00
	$1.01	$2,020.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	8 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	158 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	27 S
Product Type:	MOSFETs
Rise Time:	12 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	IPB085N15NM6 SP006055057

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Datasheet

IPB085N15NM6ATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 150 V Power MOSFETs

Infineon Technologies OptiMOS™ 6 150V Power MOSFETs feature industry-leading low R_DS(on), improved switching performance, and excellent EMI behavior, which contribute to unparalleled efficiency, power density, and reliability. The OptiMOS 6 technology offers significant improvements over its predecessor, OptiMOS 5, including up to 41% lower R_DS(on), 20% lower FOM_g, and 17% lower FOM_gd. Additionally, these MOSFETs exhibit high avalanche ruggedness and a maximum junction temperature of +175°C, ensuring robust and stable operation in demanding environments. With a wide package portfolio, Infineon OptiMOS™ 6 150V Power MOSFETs are designed to meet the stringent requirements of both high and low-switching frequency applications, providing enhanced system reliability and a longer lifetime.

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.