GTRA362002FC-V1-R0

Name: MACOM GTRA362002FC-V1-R0
Brand: MACOM
SKU: 941-GTRA362002FCV1R0
Price: 212.17 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

941-GTRA362002FCV1R0

Mfr. No:

GTRA362002FC-V1-R0

Mfr.:

MACOM

Description:

GaN FETs 200W GaN HEMT 48V 3400 to 3600MHz

Datasheet:

GTRA362002FC-V1-R0 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about MACOM GTRA362002FC-V1-R0

Shipping Alert:

This product may require additional documentation to export from the United States.

In Stock: 40

Stock:: 40 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Quantities greater than 40 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+$7.00)

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$212.17	$212.17
	$149.59	$1,495.90
Full Reel (Order in multiples of 50)
	$149.59	$7,479.50
100	Quote

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	Screw Mount
Package/Case:	H-37248C-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	4.1 A
Maximum Operating Temperature:	+ 225 C
Brand:	MACOM
Gain:	13.5 dB
Maximum Operating Frequency:	3.6 GHz
Minimum Operating Frequency:	3.4 GHz
Output Power:	200 W
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GTRA362002FC-V1-R0 Datasheet (PDF)

PCN

Product Change Notification 2024-04-25 (PDF)

This functionality requires JavaScript to be enabled.

USHTS:: 8541290055
ECCN:: 3A001.b.3.a

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications.