AT28C256-15SU-T

Microchip Technology
556-AT28C256-15SU-T
AT28C256-15SU-T

Mfr.:

Description:
EEPROM 150NS, SOIC, IND TEMP, GREEN
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Datasheet:
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Learn more about Microchip Technology AT28C256-15SU-T

In Stock: 1,906

Stock:
1,906 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$12.76 $12.76
$12.29 $307.25
$11.81 $1,181.00
Full Reel (Order in multiples of 1000)
$11.81 $11,810.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: EEPROM
RoHS:  
256 kbit
Parallel
5 MHz
32 k x 8
SOIC-28
150 ns
4.5 V
5.5 V
SMD/SMT
10 Year
- 40 C
+ 85 C
AT28C256
Reel
Cut Tape
MouseReel
Active Read Current - Max: 50 mA
Brand: Microchip Technology
Moisture Sensitive: Yes
Operating Supply Current: 50 mA
Operating Supply Voltage: 5 V
Product Type: EEPROM
Factory Pack Quantity: 1000
Subcategory: Memory & Data Storage
Supply Current - Max: 50 mA
Unit Weight: 2.311 g
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CNHTS:
8542320000
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
854232039
TARIC:
8542327500
MXHTS:
8542320299
ECCN:
EAR99

AT28C256 256K EEPROM Memory

Microchip AT28C256 256K EEPROM Memory devices are high-performance, Electrically Erasable, and Programmable Read-only Memory (EEPROM). The EEPROM 256K of memory is organized as 32,768 words by 8-bits. These devices are manufactured with Atmel's advanced non-volatile CMOS technology, offering 150ns access time with 440mW power dissipation. The AT28C256 memory devices are accessed like static RAM for reading or writing cycles without needing external components. These AT28C256 devices contain a 64-byte page register to allow writing up to 64 bytes. The EEPROM devices utilize an internal error correction for extended endurance and improved data retention. 

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