It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

MSC030SDA070B

Name: Microchip MSC030SDA070B
Brand: Microchip Technology
SKU: 494-MSC030SDA070B
Price: 4.1 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

494-MSC030SDA070B

Mfr. No:

MSC030SDA070B

Mfr.:

Microchip Technology

Description:

SiC Schottky Diodes SIC SBD 700 V 30 A TO-247

View in Development Tools Selector

Datasheet:

MSC030SDA070B Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Microchip Technology MSC030SDA070B

In Stock: 230

Stock:: 230 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 7 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$4.10	$4.10
	$3.78	$113.40
	$3.29	$394.80

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	700 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	146 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	MSC0
Packaging:	Tube
Brand:	Microchip Technology
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	700 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

PCN

This functionality requires JavaScript to be enabled.

CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.