QPD2025D

Qorvo
772-QPD2025D
QPD2025D

Mfr.:

Description:
RF JFET Transistors 0.25 mm Pwr pHEMT

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In Stock: 100

Stock:
100 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 100   Multiples: 100
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 100)
$9.33 $933.00

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF JFET Transistors
RoHS:  
pHEMT
Reel
Brand: Qorvo
Product Type: RF JFET Transistors
Series: QPD2025D
Factory Pack Quantity: 100
Subcategory: Transistors
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CNHTS:
8541210000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

QPD2025D 250um Discrete GaAs pHEMT Die

Qorvo QPD2025D 250um Discrete GaAs pHEMT Die is developed using Qorvo's proven standard 0.25um power pHEMT production process. The process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D operates from DC to 20GHz with 24dBm typical output power at P1dB with a gain of 14dB and 58% power-added efficiency at 1dB compression. With this performance level, the device is ideal for high-efficiency applications. The protective overcoat layer with silicon nitride delivers environmental robustness and scratch protection.