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RD3N06BATTL1

Name: ROHM Semiconductor RD3N06BATTL1
Brand: ROHM Semiconductor
SKU: 755-RD3N06BATTL1
Price: 2.99 USD
Availability: InStock

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See Product Specifications

Mouser No:

755-RD3N06BATTL1

Mfr. No:

RD3N06BATTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Pch -80V -60A TO-252, Power MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RD3N06BATTL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RD3N06BATTL1

In Stock: 2,130

Stock:: 2,130 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.99	$2.99
	$1.94	$19.40
	$1.34	$134.00
	$1.12	$560.00
	$1.05	$1,050.00
Full Reel (Order in multiples of 2500)
	$1.05	$2,625.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	26 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	110 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	101 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	170 ns
Forward Transconductance - Min:	23 S
Product Type:	MOSFETs
Rise Time:	46 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	265 ns
Typical Turn-On Delay Time:	27 ns

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Datasheet

RD3N06BATTL1 Datasheet

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Chinese Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel Automotive Grade Power MOSFETs

ROHM Semiconductor N-Channel Automotive Grade Power MOSFETs with low on-resistance dissipate power up to 142W. The lineup is offered in small, high-powered packages that greatly reduce the mounting area. These MOSFETs are AEC-Q101 qualified, RoHS compliant, and halogen free. Ideal applications for ROHM N-Channel Automotive Grade Power MOSFETs include advanced driver assistance systems (ADAS), body, lighting, and infotainment.