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SCT3160KLHRC11

Name: ROHM Semiconductor SCT3160KLHRC11
Brand: ROHM Semiconductor
SKU: 755-SCT3160KLHRC11
Price: 8.96 USD
Availability: InStock

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Mouser No:

755-SCT3160KLHRC11

Mfr. No:

SCT3160KLHRC11

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs 1200V 17A 103W SIC 160mOhm TO-247N

Datasheet:

SCT3160KLHRC11 Datasheet

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In Stock: 506

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Qty.	Unit Price	Ext. Price
	$8.96	$8.96
2,700	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	208 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	42 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	103 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	25 ns
Forward Transconductance - Min:	2.5 S
Packaging:	Tube
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	18 ns
Series:	SCT3x
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	SCT3160KLHR
Unit Weight:	6 g

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ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.