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TP65H035G4YS

Name: Renesas Electronics TP65H035G4YS
Brand: Renesas Electronics
SKU: 227-TP65H035G4YS
Price: 5.31 USD
Availability: OutOfStock

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Mouser No:

227-TP65H035G4YS

Mfr. No:

TP65H035G4YS

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 35mohm GaN FET in TO247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TP65H035G4YS Datasheet (PDF)

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Learn more about Renesas Electronics TP65H035G4YS

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1200 Multiples: 1200

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$5.31	$6,372.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	46.5 A
Rds On - Drain-Source Resistance:	41 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	42.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	156 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Configuration:	Single
Fall Time:	8 ns
Packaging:	Tube
Product:	FETs
Product Type:	GaN FETs
Rise Time:	12.4 ns
Series:	Gen IV SuperGaN
Factory Pack Quantity:	1200
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	GaN FET
Typical Turn-Off Delay Time:	108 ns
Typical Turn-On Delay Time:	43 ns

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Datasheet

TP65H035G4YS Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

TP65H035G4YS 650V SuperGaN® FET

Renesas Electronics TP65H035G4YS 650V SuperGaN® Field Effect Transistor (FET) is a 35mΩ gallium nitride (GaN) FET offered in a four-lead TO-247 package. This normally off-device uses Renesas Electronics's Gen IV platform and combines a high-voltage GaN HEMT with a low-voltage silicon MOSFET, resulting in superior reliability and performance. The Gen IV SuperGaN platform utilizes advanced epi and patented design technologies to simplify manufacturability. The platform also improves efficiency over silicon via lower gate charge, crossover loss, output capacitance, and reverse recovery charge. This four-lead TP65H035G4YS SuperGaN device can be used as an original design-in option or as a drop-in replacement for four-lead silicon and SiC solutions supporting power supplies at 1kW and up. Ideal applications for the Renesas Electronics 650V SuperGaN FET include datacom, industrial, PV inverters, and servo motors.