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TP65H070G4PS

Name: Renesas Electronics TP65H070G4PS
Brand: Renesas Electronics
SKU: 227-TP65H070G4PS
Price: 7.51 USD
Availability: InStock

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Mouser No:

227-TP65H070G4PS

Mfr. No:

TP65H070G4PS

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 70mohm GaN FET in TO220

Datasheet:

TP65H070G4PS Datasheet (PDF)

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In Stock: 1,226

Stock:: 1,226 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.51	$7.51
	$4.05	$40.50
	$3.72	$372.00
	$3.15	$1,575.00
Full Reel (Order in multiples of 1000)
	$3.15	$3,150.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.7 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Fall Time:	7.2 ns
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Rise Time:	6.2 ns
Series:	Gen IV SuperGaN
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	43.4 ns

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Datasheet

TP65H070G4PS Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TP65H070G4PS 650V SuperGaN® GaN FET

Renesas Electronics TP65H070G4PS 650V SuperGaN^® Gallium Nitride (GaN) FET is a 650V, 70mΩ normally-off device offering superior quality and performance. The TP65H070G4PS combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in a three-lead TO-220 package. Operating within a -55°C to +150°C temperature range, this component features 26W maximum power dissipation, an 18.4A to 29A maximum continuous drain current range, and 120A pulsed drain current (maximum). The Gen IV SuperGaN platform from Renesas Electronics uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.