TP70H300G4LSGB-TR

Renesas Electronics
227-TP70H300G4LSGBTR
TP70H300G4LSGB-TR

Mfr.:

Description:
GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
14 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$4.42 $4.42
$2.95 $29.50
$2.27 $227.00
$2.01 $1,005.00
$1.72 $1,720.00
Full Reel (Order in multiples of 3000)
$1.62 $4,860.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
700 V
SuperGaN
Brand: Renesas Electronics
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: FETs
Product Type: GaN FETs
Series: Gen IV SuperGaN
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
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USHTS:
8541497040
ECCN:
EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.