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A2TBH45M65W3-FC

Name: STMicroelectronics A2TBH45M65W3-FC
Brand: STMicroelectronics
SKU: 511-A2TBH45M65W3-FC
Price: 79.24 USD
Availability: InStock

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Mouser No:

511-A2TBH45M65W3-FC

Mfr. No:

A2TBH45M65W3-FC

Mfr.:

STMicroelectronics

Description:

MOSFET Modules ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

A2TBH45M65W3-FC Datasheet (PDF)

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In Stock: 36

Stock:: 36 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$79.24	$79.24
	$71.43	$714.30

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFET Modules
RoHS:
Mounting Style:	Press Fit
Package/Case:	ACEPACK
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	28 A
Rds On - Drain-Source Resistance:	72 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Height:	12 mm
If - Forward Current:	20 A
Length:	62.8 mm
Product:	MOSFET Modules
Product Type:	MOSFET Modules
Factory Pack Quantity:	18
Subcategory:	Discrete and Power Modules
Type:	Power Module
Vf - Forward Voltage:	1.4 V
Width:	56.7 mm
Unit Weight:	42 g

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Datasheet

A2TBH45M65W3-FC Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

A2TBH45M65W3-FC Power Module

STMicroelectronics A2TBH45M65W3-FC Power Module realizes a triple boost plus half-bridge topology in an ACEPACK^™ 2 module with NTC and capacitance. It integrates the current advances in silicon carbide MOSFETs from STMicroelectronics, represented by third-generation technology. This modular solution is used to realize complex topologies with very high power density and efficiency requirements.