+972 9 7783020

Part of the TTI Family of Specialists Contact Mouser (Tel-Aviv) +972 9 7783020 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STP26N60DM6

Name: STMicroelectronics STP26N60DM6
Brand: STMicroelectronics
SKU: 511-STP26N60DM6
Price: 4.55 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STP26N60DM6

Mfr. No:

STP26N60DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package

Complete Your Design

Datasheet:

STP26N60DM6 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STP26N60DM6

In Stock: 488

Stock:: 488 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$4.55	$4.55
	$3.01	$30.10
	$1.83	$183.00
	$1.70	$850.00
	$1.62	$1,620.00
	$1.61	$3,220.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	195 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	24 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	11 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STP26N60DM6 Datasheet (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Q_g), very low recovery charge (Q_rr), low recovery time (t_rr), and an excellent R_DS(on) per area.