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STP6N60M2

Name: STMicroelectronics STP6N60M2
Brand: STMicroelectronics
SKU: 511-STP6N60M2
Price: 2.07 USD
Availability: InStock

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Mouser No:

511-STP6N60M2

Mfr. No:

STP6N60M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-CH 600V 1.06Ohm 4.5A MDmesh M2

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Datasheet:

STP6N60M2 Datasheet (PDF)

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In Stock: 1,797

Stock:: 1,797 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.07	$2.07
	$0.771	$7.71
	$0.767	$76.70
	$0.652	$652.00
	$0.596	$1,192.00
	$0.57	$2,850.00
25,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	4.5 A
Rds On - Drain-Source Resistance:	1.06 Ohms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	22.5 ns
Product Type:	MOSFETs
Rise Time:	7.4 ns
Series:	STP6N60M2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	9.5 ns
Unit Weight:	2 g

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Datasheet

STP6N60M2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.