CSD13381F4T

Texas Instruments
595-CSD13381F4T
CSD13381F4T

Mfr.:

Description:
MOSFETs 12V N-Ch FemtoFET MO SFET A 595-CSD13381 A 595-CSD13381F4

ECAD Model:
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In Stock: 5,181

Stock:
5,181 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$0.41 $0.41
$0.376 $3.76
$0.343 $34.30
Full Reel (Order in multiples of 250)
$0.343 $85.75
$0.321 $160.50
$0.303 $303.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$0.36
Min:
1

Similar Product

Texas Instruments CSD13381F4
Texas Instruments
MOSFETs 12V N-CH Pwr MOSFET A 595-CSD13381F4T A 595-CSD13381F4T

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
N-Channel
1 Channel
12 V
2.1 A
180 mOhms
- 8 V, 8 V
850 mV
1.06 nC
- 55 C
+ 150 C
500 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 3.8 ns
Forward Transconductance - Min: 3.2 S
Product Type: MOSFETs
Rise Time: 1.5 ns
Series: CSD13381F4
Factory Pack Quantity: 250
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 11 ns
Typical Turn-On Delay Time: 3.7 ns
Unit Weight: 0.400 mg
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Attributes selected: 0

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CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.