CSD16411Q3

Texas Instruments
595-CSD16411Q3
CSD16411Q3

Mfr.:

Description:
MOSFETs N-Ch NexFET Power MO SFETs

ECAD Model:
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In Stock: 4,267

Stock:
4,267 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$1.38 $1.38
$0.869 $8.69
$0.576 $57.60
$0.45 $225.00
$0.405 $405.00
Full Reel (Order in multiples of 2500)
$0.313 $782.50
$0.31 $7,750.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
VSON-CLIP-8
N-Channel
1 Channel
25 V
100 A
10 mOhms
- 12 V, 16 V
1.7 V
2.9 nC
- 55 C
+ 150 C
35 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Development Kit: TPS2592AAEVM-531, TPS2592BLEVM-531
Fall Time: 3.1 ns
Forward Transconductance - Min: 30 S
Product Type: MOSFETs
Rise Time: 7.8 ns
Series: CSD16411Q3
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 6 ns
Typical Turn-On Delay Time: 5.3 ns
Unit Weight: 41.600 mg
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8542399000
MXHTS:
85423999
ECCN:
EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.