CSD23280F3T

Texas Instruments
595-CSD23280F3T
CSD23280F3T

Mfr.:

Description:
MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3

ECAD Model:
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In Stock: 2,916

Stock:
2,916 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$1.33 $1.33
$0.841 $8.41
$0.482 $48.20
Full Reel (Order in multiples of 250)
$0.482 $120.50
$0.411 $205.50
$0.368 $368.00
$0.352 $880.00
$0.318 $1,590.00
$0.301 $3,010.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$0.34
Min:
1

Similar Product

Texas Instruments CSD23280F3
Texas Instruments
MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3T

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
P-Channel
1 Channel
12 V
1.8 A
250 mOhms
- 6 V, 6 V
950 mV
950 pC
- 55 C
+ 150 C
500 mW
Enhancement
PicoStar
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 8 ns
Forward Transconductance - Min: 3 S
Product Type: MOSFETs
Rise Time: 4 ns
Series: CSD23280F3
Factory Pack Quantity: 250
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 8 ns
Unit Weight: 0.300 mg
Products found:
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Attributes selected: 0

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CNHTS:
8541210000
CAHTS:
8541100090
USHTS:
8541210095
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.