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TK068N65Z5,S1F

Name: Toshiba TK068N65Z5,S1F
Brand: Toshiba
SKU: 757-TK068N65Z5S1F
Price: 9.09 USD
Availability: InStock

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See Product Specifications

Mouser No:

757-TK068N65Z5S1F

Mfr. No:

TK068N65Z5,S1F

Mfr.:

Toshiba

Description:

MOSFETs TO247 650V 1.69A N-CH

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK068N65Z5,S1F Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK068N65Z5,S1F

In Stock: 205

Stock:: 205 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$9.09	$9.09
	$5.87	$58.70
	$5.17	$620.40
	$4.97	$2,534.70

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	37 A
Rds On - Drain-Source Resistance:	68 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	270 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	3.5 ns
Product Type:	MOSFETs
Rise Time:	51 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	115 ns
Typical Turn-On Delay Time:	92 ns

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Datasheet

TK068N65Z5,S1F Datasheet (PDF)

Application Notes

Models

Product Catalogs

Selection Guide 2025 - MOSFETs

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.