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TK12Q60W,S1VQ

Name: Toshiba TK12Q60W,S1VQ
Brand: Toshiba
SKU: 757-TK12Q60WS1VQ
Price: 3.16 USD
Availability: OutOfStock

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See Product Specifications

Mouser No:

757-TK12Q60WS1VQ

Mfr. No:

TK12Q60W,S1VQ

Mfr.:

Toshiba

Description:

MOSFETs DTMOSIV 600V 340mOhm 11.5A 100W 890pF

Datasheet:

TK12Q60W,S1VQ Datasheet (PDF)

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Learn more about Toshiba TK12Q60W,S1VQ

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$3.16	$3.16
	$1.49	$14.90
	$1.29	$129.00
	$1.14	$570.00
	$1.02	$1,020.00
Full Reel (Order in multiples of 75)
	$1.49	$111.75

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-251-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	11.5 A
Rds On - Drain-Source Resistance:	265 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.7 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	100 W
Tradename:	DTMOSIV
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Fall Time:	5.5 ns
Product Type:	MOSFETs
Rise Time:	23 ns
Series:	TK12Q60W
Factory Pack Quantity:	75
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	85 ns
Typical Turn-On Delay Time:	45 ns
Unit Weight:	340 mg

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Datasheet

TK12Q60W,S1VQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.