TK31J60W,S1VQ

Toshiba
757-TK31J60WS1VQ
TK31J60W,S1VQ

Mfr.:

Description:
MOSFETs N-Ch 30.8A 230W FET 600V 3000pF 86nC

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Toshiba TK31J60W,S1VQ

Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$9.40 $9.40
$5.93 $59.30
$4.98 $498.00
$4.64 $2,320.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-3PN-3
N-Channel
1 Channel
600 V
30.8 A
88 mOhms
- 30 V, 30 V
105 nC
230 W
DTMOSIV
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK31J60W
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 4.600 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.