It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

TK39N60W5,S1VF

Name: Toshiba TK39N60W5,S1VF
Brand: Toshiba
SKU: 757-TK39N60W5S1VF
Price: 7.28 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-TK39N60W5S1VF

Mfr. No:

TK39N60W5,S1VF

Mfr.:

Toshiba

Description:

MOSFETs Power MOSFET N-Channel

Datasheet:

TK39N60W5,S1VF Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TK39N60W5,S1VF

In Stock: 4,415

Stock:: 4,415 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.28	$7.28
	$4.43	$44.30
	$4.08	$489.60
	$3.56	$1,815.60
	$3.41	$8,593.20

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	38.8 A
Rds On - Drain-Source Resistance:	62 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	270 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	120 ns
Series:	TK39N60W5
Factory Pack Quantity:	30
Subcategory:	Transistors
Typical Turn-Off Delay Time:	200 ns
Typical Turn-On Delay Time:	180 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK39N60W5,S1VF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.