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TK9R7A15Q5,S4X

Name: Toshiba TK9R7A15Q5,S4X
Brand: Toshiba
SKU: 757-TK9R7A15Q5S4X
Price: 3.94 USD
Availability: InStock

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See Product Specifications

Mouser No:

757-TK9R7A15Q5S4X

Mfr. No:

TK9R7A15Q5,S4X

Mfr.:

Toshiba

Description:

MOSFETs TO220 150V 1.1A N-CH

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK9R7A15Q5,S4X Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK9R7A15Q5,S4X

In Stock: 209

Stock:: 209 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$3.94	$3.94
	$2.24	$22.40
	$1.87	$187.00
	$1.81	$905.00
	$1.78	$1,780.00
	$1.74	$4,350.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220SIS-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	49 A
Rds On - Drain-Source Resistance:	9.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	50 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	36 ns
Product Type:	MOSFETs
Rise Time:	42 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	69 ns

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Datasheet

TK9R7A15Q5,S4X Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.