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IRLR110TRPBF-BE3

Name: Vishay IRLR110TRPBF-BE3
Brand: Vishay Semiconductors
SKU: 78-IRLR110TRPBF-BE3
Price: 2.03 USD
Availability: InStock

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Mouser No:

78-IRLR110TRPBF-BE3

Mfr. No:

IRLR110TRPBF-BE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs TO252 100V 4.3A N-CH MOSFET

Datasheet:

IRLR110TRPBF-BE3 Datasheet

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In Stock: 5,540

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.03	$2.03
	$1.30	$13.00
	$0.879	$87.90
	$0.698	$349.00
	$0.646	$646.00
	$0.591	$1,182.00
	$0.573	$2,292.00
	$0.537	$5,370.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	4.3 A
Rds On - Drain-Source Resistance:	540 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	6.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Packaging:	Bulk
Brand:	Vishay Semiconductors
Fall Time:	17 ns
Forward Transconductance - Min:	2.3 S
Product Type:	MOSFETs
Rise Time:	47 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	9.3 ns

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Technical Resources

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IRL Power MOSFETs

Vishay IRL Power MOSFETs offer an optimal balance of fast switching, rugged design, low on-resistance, and cost efficiency. The Vishay IRL MOSFETs are available in SOT-223 and DPAK packages. These MOSFETs support surface mounting using vapor phase, infrared, or wave soldering techniques. The SOT-223 package features an enlarged tab for improved thermal performance, enabling power dissipation exceeding 1.25W, while the DPAK package allows for power dissipation up to 1.5W in typical applications. The IRLU and SiHLU series also provide a straight-lead option for through-hole mounting.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.