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SI2369BDS-T1-GE3

Name: Vishay SI2369BDS-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SI2369BDS-T1-GE3
Price: 0.64 USD
Availability: InStock

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Mouser No:

78-SI2369BDS-T1-GE3

Mfr. No:

SI2369BDS-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 30-V (D-S) MOSFET P-CHANNEL

Datasheet:

SI2369BDS-T1-GE3 Datasheet

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In Stock: 335,246

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.64	$0.64
	$0.399	$3.99
	$0.256	$25.60
	$0.194	$97.00
	$0.173	$173.00
Full Reel (Order in multiples of 3000)
	$0.145	$435.00
	$0.135	$810.00
	$0.117	$1,053.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	7.5 A
Rds On - Drain-Source Resistance:	27 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	12.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	22 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	8 mg

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Datasheet

SI2369BDS-T1-GE3 Datasheet

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.