SI4101DY-T1-GE3

Vishay Semiconductors
78-SI4101DY-T1-GE3
SI4101DY-T1-GE3

Mfr.:

Description:
MOSFETs -30V Vds 20V Vgs SO-8

Datasheet:
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Learn more about Vishay Semiconductors SI4101DY-T1-GE3

In Stock: 78,270

Stock:
78,270 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$1.27 $1.27
$0.803 $8.03
$0.531 $53.10
$0.419 $209.50
$0.377 $377.00
Full Reel (Order in multiples of 2500)
$0.377 $942.50
$0.312 $1,560.00
$0.298 $2,980.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOIC-8
P-Channel
1 Channel
30 V
25.7 A
5 mOhms
- 20 V, 20 V
2.5 V
203 nC
- 55 C
+ 150 C
6 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 11 ns
Forward Transconductance - Min: 72 S
Product Type: MOSFETs
Rise Time: 9 ns
Series: SI4
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 750 mg
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Attributes selected: 0

CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Si4 TrenchFET® Power MOSFETs

Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.

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