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SUM110P06-08L-E3

Name: Vishay SUM110P06-08L-E3
Brand: Vishay Semiconductors
SKU: 781-SUM110P06-08L-E3
Price: 3.52 USD
Availability: InStock

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Mouser No:

781-SUM110P06-08L-E3

Mfr. No:

SUM110P06-08L-E3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 60V 110A 272W 8.0mohm @ 10V

Datasheet:

SUM110P06-08L-E3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SUM110P06-08L-E3

In Stock: 138,921

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.52	$3.52
	$3.04	$30.40
	$2.64	$66.00
	$2.32	$232.00
	$2.29	$572.50
	$2.09	$1,045.00
Full Reel (Order in multiples of 800)
	$1.92	$1,536.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	110 A
Rds On - Drain-Source Resistance:	8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	160 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	272 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	300 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	190 ns
Series:	SUM
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	140 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	4 g

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Datasheet

SUM110P06-08L-E3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.