SUP57N20-33-E3

Vishay Semiconductors
781-SUP57N20-33-E3
SUP57N20-33-E3

Mfr.:

Description:
MOSFETs 200V 57A 300W

ECAD Model:
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In Stock: 8,375

Stock:
8,375 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.35 $3.35
$2.26 $22.60
$2.19 $219.00
$2.18 $1,090.00
$2.10 $5,250.00
$2.04 $10,200.00

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-220-3
N-Channel
1 Channel
200 V
57 A
27 mOhms
- 20 V, 20 V
2 V
130 nC
- 55 C
+ 175 C
300 W
Enhancement
TrenchFET
Tube
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 200 ns
Forward Transconductance - Min: 25 S
Product Type: MOSFETs
Rise Time: 220 ns
Series: SUP
Factory Pack Quantity: 500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 24 ns
Unit Weight: 2 g
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Attributes selected: 0

CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.