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SI2347DS-T1-BE3

Name: Vishay SI2347DS-T1-BE3
Brand: Vishay / Siliconix
SKU: 78-SI2347DS-T1-BE3
Price: 0.43 USD
Availability: InStock

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Mouser No:

78-SI2347DS-T1-BE3

Mfr. No:

SI2347DS-T1-BE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs SOT23 P-CH 30V 3.8A

Datasheet:

SI2347DS-T1-BE3 Datasheet

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In Stock: 204,629

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.43	$0.43
	$0.267	$2.67
	$0.169	$16.90
	$0.126	$63.00
	$0.111	$111.00
Full Reel (Order in multiples of 3000)
	$0.071	$213.00
	$0.067	$402.00
	$0.064	$576.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

SI2347DS-T1-GE3

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$0.44

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	6.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.7 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	SI2347DS-T1-GE3
Unit Weight:	4 g

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This part number has a BE3 suffix; however, it is the exact form, fit, 
and function of the part number with the GE3 suffix. The only 
difference is the country of origin.
Please contact a Mouser Technical Service Representative for further 
assistance 
5-0321-10

Filter Document:

Datasheet

SI2347DS-T1-BE3 Datasheet

Application Notes

Mounting LITTLE FOOT SOT-23 Power MOSFETs

Models

Technical Resources

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CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.