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SUD19P06-60L-E3

Name: Vishay SUD19P06-60L-E3
Brand: Vishay / Siliconix
SKU: 781-SUD19P06-60L-E3
Price: 1.36 USD
Availability: InStock

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Mouser No:

781-SUD19P06-60L-E3

Mfr. No:

SUD19P06-60L-E3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs 60V 19A 46W 60mohm @ 10V

Datasheet:

SUD19P06-60L-E3 Datasheet

ECAD Model:

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In Stock: 58,062

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.36	$1.36
	$0.746	$7.46
	$0.582	$58.20
	$0.515	$257.50
	$0.494	$494.00
Full Reel (Order in multiples of 2000)
	$0.493	$986.00
	$0.475	$1,900.00
	$0.463	$11,112.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	19 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	46 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Product Type:	MOSFETs
Series:	SUD19P
Factory Pack Quantity:	2000
Subcategory:	Transistors
Unit Weight:	330 mg

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Datasheet

SUD19P06-60L-E3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.