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NVMFWS004N10MCT1G

Name: onsemi NVMFWS004N10MCT1G
Brand: onsemi
SKU: 863-VMFWS004N10MCT1G
Price: 3.57 USD
Availability: InStock

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Mouser No:

863-VMFWS004N10MCT1G

Mfr. No:

NVMFWS004N10MCT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V STD SO8FL

Datasheet:

NVMFWS004N10MCT1G Datasheet

ECAD Model:

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In Stock: 936

Stock:: 936 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$3.57	$3.57
	$2.34	$23.40
	$1.64	$164.00
	$1.43	$715.00
	$1.33	$1,330.00
Full Reel (Order in multiples of 1500)
	$1.33	$1,995.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	138 A
Rds On - Drain-Source Resistance:	3.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	48 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	164 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	13 ns
Forward Transconductance - Min:	120 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	NVMFWS004N10MC
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	25 ns

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Datasheet

NVMFWS004N10MCT1G Datasheet

PCN

Product Change Notification 2024-07-03 (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVMFWS004N10MC Single N-Channel Power MOSFETs

onsemi NVMFWS004N10MC Single N-Channel Power MOSFETs provide a 138A continuous drain current, 3.9mΩ at 10V R_DS(ON), and 100V drain-to-source voltage. The NVMFWS004N10MC is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.