+972 9 7783020

Part of the TTI Family of Specialists Contact Mouser (Tel-Aviv) +972 9 7783020 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NXH015P120M3F1PTG

Name: onsemi NXH015P120M3F1PTG
Brand: onsemi
SKU: 863-NXH015P12M3F1PTG
Price: 75.71 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NXH015P12M3F1PTG

Mfr. No:

NXH015P120M3F1PTG

Mfr.:

onsemi

Description:

MOSFET Modules 15M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NXH015P120M3F1PTG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 66

Stock:: 66 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$75.71	$75.71
	$67.62	$676.20

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	PIM-18
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Id - Continuous Drain Current:	77 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	198 W
Series:	NXH015P120M3F1PTG
Packaging:	Tray
Brand:	onsemi
Configuration:	Half-Bridge
Fall Time:	8 ns
Height:	12.35 mm
Length:	63.3 mm
Product Type:	MOSFET Modules
Rise Time:	9 ns
Factory Pack Quantity:	28
Subcategory:	Discrete and Power Modules
Tradename:	EliteSiC
Type:	Half Bridge
Typical Turn-Off Delay Time:	94 ns
Typical Turn-On Delay Time:	25 ns
Width:	34.1 mm

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NXH015P120M3F1PTG Datasheet

CNHTS:: 8504409100
USHTS:: 8542390070
ECCN:: EAR99

NXH0xxP120M3F1 Silicone Carbide (SiC) Modules

onsemi NXH0xxP120M3F1 Silicone Carbide (SiC) Modules contain 8mΩ/1200V, 10mΩ/1200V, 15mΩ/1200V, and 30mΩ/1200V M3S SiC MOSFETs based on half-bridge topology and a thermistor in a F1 package. These modules feature pre-applied Thermal Interface Material (TIM) and without pre-applied TIM. The NXH0xxP120M3F1 modules are designed with press-fit pins and are Pb-free, Halide-free, and RoHS-compliant. These power modules are used in solar inverters, industrial power, Electric Vehicle (EV) charging stations, and Uninterruptible Power Supplies (UPS).