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IRF540ZPBF

Name: Infineon IRF540ZPBF
Brand: Infineon Technologies
SKU: 942-IRF540ZPBF
Price: 0.69 USD
Availability: InStock

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Mouser No:

942-IRF540ZPBF

Mfr. No:

IRF540ZPBF

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFT 100V 36A 26.5mOhm 42nC Qg

Datasheet:

IRF540ZPBF Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IRF540ZPBF

In Stock: 3,878

Stock:: 3,878

Can Dispatch Immediately

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On Order:: 2,000

Expected 18/03/2026

17,000

Expected 02/04/2026
Factory Lead Time:: 17

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$0.69	$0.69
	$0.589	$5.89
	$0.549	$54.90
	$0.497	$248.50
	$0.45	$450.00
	$0.433	$2,165.00
	$0.424	$10,600.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	26.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	92 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Product Type:	MOSFETs
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	2 g

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Datasheet

IRF540ZPBF Datasheet (PDF)

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Spice Model - IRF540Z

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IRF540N/Z Advanced HEXFET® Power MOSFETs

Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.