KTDM2G3C618BGIEAT

SMARTsemi
473-M2G3C618BGIEAT
KTDM2G3C618BGIEAT

Mfr.:

Description:
DRAM DRAM DDR3(L) 2GB 125MX16 1866Mbps 1.35V/1.5V 96-FBGA Industrial

Datasheet:
ECAD Model:
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Learn more about SMARTsemi KTDM2G3C618BGIEAT

In Stock: 124

Stock:
124 Can Dispatch Immediately
Quantities greater than 124 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$10.78 $10.78
$10.49 $104.90
$8.91 $1,764.18
$8.69 $5,161.86
$8.62 $10,240.56

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
2 Gbit
16 bit
933 MHz
FBGA-96
128 M x 16
1.283 V
1.575 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 198
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Memory ICs

SMARTsemi DDR3 Memory ICs feature a double data rate architecture to achieve high-speed operation. The ICs achieve high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features, and all control and address inputs are synchronized with a pair of externally supplied differential clocks.

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