MR4A16BCYS35R

Everspin Technologies
936-MR4A16BCYS35R
MR4A16BCYS35R

Mfr.:

Description:
MRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM

Datasheet:
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Learn more about Everspin Technologies MR4A16BCYS35R

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
996
Expected 15/04/2026
Factory Lead Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$54.10 $54.10
$49.97 $499.70
$48.37 $1,209.25
$48.36 $2,418.00
Full Reel (Order in multiples of 1000)
$44.38 $44,380.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
MR4A16BCYS35
Packaging:
Tray
Availability:
In Stock
Price:
$56.34
Min:
1

Similar Product

Everspin Technologies MR4A16BCYS35
Everspin Technologies
MRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Everspin Technologies
Product Category: MRAM
RoHS:  
TSOP-II-54
Parallel
16 Mbit
1 M x 16
16 bit
35 ns
3 V
3.6 V
60 mA, 152 mA
- 40 C
+ 85 C
MR4A16B
Reel
Cut Tape
MouseReel
Brand: Everspin Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Pd - Power Dissipation: 600 mW
Product Type: MRAM
Factory Pack Quantity: 1000
Subcategory: Memory & Data Storage
Tradename: Parallel I/O (x16)
Products found:
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Attributes selected: 0

Datasheet

PCN

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CNHTS:
8542329010
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8471600499
ECCN:
EAR99

MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

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