It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NTMFS7D5N15MC

Name: onsemi NTMFS7D5N15MC
Brand: onsemi
SKU: 863-NTMFS7D5N15MC
Price: 5.12 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NTMFS7D5N15MC

Mfr. No:

NTMFS7D5N15MC

Mfr.:

onsemi

Description:

MOSFETs PTNG 150V 7.4MOHM POWERCLIP56

Datasheet:

NTMFS7D5N15MC Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NTMFS7D5N15MC

In Stock: 2,858

Stock:: 2,858 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 33 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$5.12	$5.12
	$3.54	$35.40
	$2.53	$253.00
	$2.43	$1,215.00
	$2.36	$2,360.00
Full Reel (Order in multiples of 3000)
	$1.98	$5,940.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PQFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	95.6 A
Rds On - Drain-Source Resistance:	7.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	166.7 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	91 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	NTMFS7D5N15MC
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	27 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTMFS7D5N15MC Datasheet

Material Composition Disclosure

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are N-channel MOSFETs that minimize on-state resistance and maintain superior switching performance with best-in-class soft body diode. These MOSFET offers lower Q_rr compared to other MOSFETs. onsemi Shielded Gate PowerTrench MOSFETs lower switching noise/electromagnetic interference (EMI). These MOSFETs feature low R_DS(on) to minimize conduction losses and low Q_G and capacitance to minimize driver losses. The Shielded Gate PowerTrench MOSFETs come in a small PQFN8 package with 5mm x 6mm dimensions for compact designs. Typical applications include synchronous rectification (SR), AC-DC and DC-DC power supplies, AC-DC adapters (USB Power Delivery) SR, and load switches.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.

NTMFS7D5N15MC Shielded Gate PowerTrench® MOSFET

onsemi NTMFS7D5N15MC N-Channel Shielded Gate PowerTrench® MOSFET is produced using an advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with a best-in-class soft-body diode. The onsemi NTMFS7D5N15MC lowers switching noise, EMI, capacitance (to minimize driver losses), and R_DS(on) (to minimize conduction losses).