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NVMYS021N06CLTWG

Name: onsemi NVMYS021N06CLTWG
Brand: onsemi
SKU: 863-NVMYS021N06CLTWG
Price: 1.38 USD
Availability: InStock

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Mouser No:

863-NVMYS021N06CLTWG

Mfr. No:

NVMYS021N06CLTWG

Mfr.:

onsemi

Description:

MOSFETs 60V 21mOhm 27A Single N-Channel

Datasheet:

NVMYS021N06CLTWG Datasheet

ECAD Model:

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In Stock: 2,938

Stock:: 2,938

Can Dispatch Immediately

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On Order:: 3,000

Expected 26/05/2026
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.38	$1.38
	$0.867	$8.67
	$0.575	$57.50
	$0.452	$226.00
	$0.41	$410.00
Full Reel (Order in multiples of 3000)
	$0.361	$1,083.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	27 A
Rds On - Drain-Source Resistance:	21 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	28 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	1.5 ns
Forward Transconductance - Min:	37 S
Product Type:	MOSFETs
Rise Time:	12 ns
Series:	NVMYS021N06CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	4 ns
Unit Weight:	75 mg

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Datasheet

NVMYS021N06CLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.