SCS220KE2HRC11

ROHM Semiconductor
755-SCS220KE2HRC11
SCS220KE2HRC11

Mfr.:

Description:
SiC Schottky Diodes AECQ

Datasheet:
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Availability

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0

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On Order:
442
Expected 06/04/2026
Factory Lead Time:
21
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$15.96 $15.96
$9.84 $98.40
$9.30 $930.00
$8.45 $3,802.50

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247N-3
Dual
20 A
1.2 kV
1.6 V
84 A
200 uA
+ 175 C
AEC-Q101
Tube
Brand: ROHM Semiconductor
Pd - Power Dissipation: 270 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 450
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Part # Aliases: SCS220KE2HR
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Attributes selected: 0

Datasheet

Specification Sheets

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CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100199
BRHTS:
85411099
ECCN:
EAR99

AEC-Q101 SiC Schottky Barrier Diodes

ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes deliver breakdown voltages from 600V, far exceeding the upper limit for silicon SBDs. The AEC-Q101 Diodes utilize SiC, making them ideal for PFC circuits and inverters. Additionally, high-speed switching is enabled with ultra-small reverse recovery time. This minimizes both reverse recovery charge and switching loss, contributing to end-product miniaturization. ROHM AEC-Q101 SiC Schottky Barrier Diodes offer a reverse voltage range of 650V to 1200V, a continuous forward current range of 1.2µA to 260µA, and a total power dissipation range between 48W to 280W. The devices are available in TO-247 and TO-263 packages, with a max temperature of +175°C.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

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