It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SIA421DJ-T1-GE3

Name: Vishay SIA421DJ-T1-GE3
Brand: Vishay Semiconductors
SKU: 781-SIA421DJ-T1-GE3
Price: 1.83 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

781-SIA421DJ-T1-GE3

Mfr. No:

SIA421DJ-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs -30V Vds 20V Vgs PowerPAK SC-70

Datasheet:

SIA421DJ-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay Semiconductors SIA421DJ-T1-GE3

In Stock: 2,915

Stock:: 2,915

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 3,000

Expected 05/10/2026
Factory Lead Time:: 33

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.83	$1.83
	$1.14	$11.40
	$0.744	$74.40
	$0.572	$286.00
	$0.517	$517.00
Full Reel (Order in multiples of 3000)
	$0.415	$1,245.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	19 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	19 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10 ns
Forward Transconductance - Min:	15 S
Product Type:	MOSFETs
Rise Time:	12 ns
Series:	SIA
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	SIA421DJ-GE3
Unit Weight:	41 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIA421DJ-T1-GE3 Datasheet

Models

PCN

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

PowerPAK SC-70 MOSFETs

Vishay Semiconductors PowerPAK® SC-70 MOSFET combines the tiny footprint of the SC-70 package with on-resistance comparable to the larger TSOP-6, resulting in very low power consumption in a package 50% smaller than the TSOP-6 and 27% thinner. The Vishay Semiconductor PowerPAK SC-70 MOSFET comes in a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The PowerPAK SC-70 MOSFET features voltage ranges between 8V and 30V with extremely low on-resistance values down to 0.011Ω at 4.5V.