SISS52DN-T1-GE3

Vishay / Siliconix
78-SISS52DN-T1-GE3
SISS52DN-T1-GE3

Mfr.:

Description:
MOSFETs PPAK1212 N-CH 30V 47.1A

ECAD Model:
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In Stock: 4,098

Stock:
4,098 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$1.57 $1.57
$0.992 $9.92
$0.671 $67.10
$0.529 $264.50
$0.481 $481.00
Full Reel (Order in multiples of 3000)
$0.423 $1,269.00
$0.393 $2,358.00
$0.382 $3,438.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
PowerPAK1212-8S
N-Channel
1 Channel
30 V
162 A
1.2 mOhms
- 12 V, 16 V
4.2 V
65 nC
- 55 C
+ 150 C
57 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay / Siliconix
Fall Time: 6 ns
Product Type: MOSFETs
Rise Time: 6 ns
Series: SISS
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N - Channel
Typical Turn-Off Delay Time: 26 ns
Typical Turn-On Delay Time: 12 ns
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CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs

Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low RDS(on). These power MOSFETs offer 30V VDS and very low RDS x Qg Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A ID and 19.9nC Qg. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A ID and 21nC Qg. This 100% Rg and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.

TrenchFET® Gen V Power MOSFETs with VDS

Vishay / Siliconix TrenchFET® Gen V Power MOSFETs increase power conversion efficiency with a very low RDS x Qg figure-of-merit (FOM). The Gen V Power MOSFETs have 80V, 100V, and 150V drain-source breakdown voltage options. The Gen V Power MOSFETs are available in a PowerPAK® 1212-8SH or PowerPAK SO-8 single package.