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SSM6N67NU,LF

Name: Toshiba SSM6N67NU,LF
Brand: Toshiba
SKU: 757-SSM6N67NULF
Price: 0.61 USD
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6N67NULF

Mfr. No:

SSM6N67NU,LF

Mfr.:

Toshiba

Description:

MOSFETs LowON Res MOSFET ID=4A VDSS=30V

Datasheet:

SSM6N67NU,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6N67NU,LF

In Stock: 30,311

Stock:: 30,311

Can Dispatch Immediately

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On Order:: 45,000

Expected 06/03/2026

72,000

Expected 04/05/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.61	$0.61
	$0.379	$3.79
	$0.243	$24.30
	$0.184	$92.00
	$0.163	$163.00
Full Reel (Order in multiples of 3000)
	$0.133	$399.00
	$0.123	$738.00
	$0.106	$954.00
	$0.102	$2,448.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UDFN-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	39.1 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Qg - Gate Charge:	3.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	U-MOSVII-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Dual
Forward Transconductance - Min:	6 S
Product Type:	MOSFETs
Series:	SSM6N67NU
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	26 ns
Unit Weight:	8.500 mg

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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

SSM6N67NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low R_ON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.