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TCKE800NA,RF

Name: Toshiba TCKE800NA,RF
Brand: Toshiba
SKU: 757-TCKE800NA,RF
Price: 1.42 USD
Availability: InStock

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Mouser No:

757-TCKE800NA,RF

Mfr. No:

TCKE800NA,RF

Mfr.:

Toshiba

Description:

Hot Swap Voltage Controllers eFuse IC, Auto retry, Vin: 4.4V-18V, 5A, Ron: 28mOhm, Adjustable SRC

Datasheet:

TCKE800NA,RF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TCKE800NA,RF

In Stock: 7,308

Stock:: 7,308 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Packaging:

Full Reel (Order in multiples of 4000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.42	$1.42
	$1.04	$10.40
	$0.939	$23.48
	$0.833	$83.30
	$0.782	$195.50
	$0.751	$375.50
	$0.726	$726.00
Full Reel (Order in multiples of 4000)
	$0.625	$2,500.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	Hot Swap Voltage Controllers
RoHS:
Product:	eFuse ICs
Current Limit:	Adjustable
Supply Voltage - Max:	18 V
Supply Voltage - Min:	4.4 V
Number of Channels:	1 Channel
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	WSON10B-10
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Power Fail Detection:	No
Brand:	Toshiba
Product Type:	Hot Swap Voltage Controllers
Series:	TCKE8
Factory Pack Quantity:	4000
Subcategory:	PMIC - Power Management ICs
Part # Aliases:	TCKE800NA,RF(S

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Datasheet

TCKE800NA,RF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Discrete Solid State Drive (SSD) Solutions

Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets current requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands and protection that keeps essential data safe from failures. Toshiba offers a comprehensive lineup of load switches and MOSFETs for controlling power inputs, protection ICs, and diodes designed to handle abnormal input power conditions and overvoltage surges during hotplug.

TCKE8xx & TCKE712BNL eFuse ICs

Toshiba TCKE8xx and TCKE712BNL eFuse ICs integrate a comprehensive range of high-speed, resettable, and low-on-resistance (R_ON) circuit protection functions in a single compact 3x3mm WSON10B package. The eFuse ICs provide short-circuit, adjustable overcurrent protection, and an adjustable inrush current slew rate. The TCKE8xx also features a thermal shutdown capability, a fixed overvoltage clamp, and in conjunction with an external MOSFET (TCKE8xx) and built-in FET (TCKE712BNL), reverse current blocking. These features make the Toshiba TCKE8xx ideal for a wide range of industrial applications, home appliances, office automation equipment, and battery-powered IoT sensor devices. Incorporating an eFuse into designs ensures products meet the requirements stipulated by international safety standards, such as IEC/UL62368-1 and UL2367.

Cordless Power Tool Solutions

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LM5060 High-Side Protection Controllers

Texas Instruments LM5060 High-Side Protection Controllers with Low Quiescent Current offers intelligent control of a high-side N-channel MOSFET during normal on/off transitions and fault conditions. The constant rise time of the output voltage results from the inrush current control. Both an Input UVLO (with hysteresis) and a programmable input OVP are provided, with an enable input offering a remote on or off control. The initial start-up V_GS fault detection delay time, the transition V_DS fault detection delay time, and the continuous over-current V_DS fault detection delay time is programmed from a single capacitor. The MOSFET is latched off until either the enable input, or the UVLO input is toggled low and then high when a detected fault condition persists longer than the allowed fault delay time.