WST41H0D-GP4

MACOM
937-WST41H0D-GP4
WST41H0D-GP4

Mfr.:

Description:
GaN FETs Die, DC - 4 GHz, 120W, G28V5-1C

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about MACOM WST41H0D-GP4
This product may require additional documentation to export from the United States.

In Stock: 50

Stock:
50 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 10   Multiples: 10
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$364.05 $3,640.50

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
SMD/SMT
1 Channel
84 V
6 A
60 mOhms
- 10 V, + 2 V
- 2 V
- 40 C
+ 85 C
Brand: MACOM
Configuration: Single
Gain: 17.5 dB
Maximum Operating Frequency: 4 GHz
Minimum Operating Frequency: DC
Output Power: 223.87 W
Product: GaN FETs
Product Type: GaN FETs
Factory Pack Quantity: 10
Subcategory: Transistors
Technology: GaN, SiC
Type: GaN on SiC Transistor
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Attributes selected: 0

Datasheet

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CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
3A001.b.3.a.4

GaN on SiC Transistors

MACOM GaN on SiC Transistors are next-generation RF power transistors that deliver industry-leading gain, efficiency, and power in the same compact footprint. These transistors feature 28V operating voltage, up to 8GHz frequency, high efficiency, and high breakdown voltage. The GaN on SiC transistors support high power, gain, and efficiency, while keeping the same footprint, versus previous generations. These transistors are 100% pass-biased JEDEC HAST (JESD22-A110E) and pass-Highly Accelerated Temperature and Humidity Stress Test (HAST). The GaN on SiC transistors are ideal for 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and general amplification.

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