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NDSH10170A

Name: onsemi NDSH10170A
Brand: onsemi
SKU: 863-NDSH10170A
Price: 10.22 USD
Availability: InStock

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Mouser No:

863-NDSH10170A

Mfr. No:

NDSH10170A

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC JBS 1700V 10A TO247

Datasheet:

NDSH10170A Datasheet

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Learn more about onsemi NDSH10170A

In Stock: 601

Stock:: 601 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$10.22	$10.22
	$7.13	$71.30
	$5.49	$549.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Configuration:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	1.7 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	105 A
Ir - Reverse Current:	40 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	NDSH10170A
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	CN
Country of Diffusion:	KR
Country of Origin:	CN
Pd - Power Dissipation:	185 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	450
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	1.7 kV

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Datasheet

NDSH10170A Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541100000
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

1700V EliteSiC (Silicon Carbide) Diodes

onsemi 1700V EliteSiC (Silicon Carbide) Diodes use a technology that provides superior switching performance and higher reliability compared to Silicon. onsemi 1700V EliteSiC Diodes feature no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI and system size, and increased cost-effectiveness.