+972 9 7783020

Part of the TTI Family of Specialists Contact Mouser (Tel-Aviv) +972 9 7783020 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

IS20M8R0S1P

Name: iDEAL Semiconductor IS20M8R0S1P
Brand: iDEAL Semiconductor
SKU: 25-IS20M8R0S1P
Price: 5.9 USD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

25-IS20M8R0S1P

Mfr. No:

IS20M8R0S1P

Mfr.:

iDEAL Semiconductor

Description:

MOSFETs N-CH 200V 128A TO-220

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IS20M8R0S1P Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 1,000

Expected 07/09/2026
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$5.90	$5.90
	$3.86	$38.60
	$2.84	$284.00
	$2.53	$1,265.00
	$2.23	$2,230.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	iDEAL Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	128 A
Rds On - Drain-Source Resistance:	8.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4.1 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	333 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	iDEAL Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	US
Country of Origin:	US
Fall Time:	5.5 ns
Forward Transconductance - Min:	37 S
Product Type:	MOSFETs
Rise Time:	5.9 ns
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	41.8 ns
Typical Turn-On Delay Time:	18.7 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IS20M8R0S1P Datasheet (PDF)

Videos

SuperQ Intro

TARIC:: 8541290000
ECCN:: EAR99

IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET

iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET is engineered for high-efficiency SMPS and motor drive applications. This MOSFET delivers low R_DS(on)and Q_SW,resulting in lower switching losses and reduced heat dissipation at both full and partial loads. Typical applications include motor control, boost converters, and SMPS control FETs, and secondary side synchronous rectifiers.