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NTH4L018N075SC1

Name: onsemi NTH4L018N075SC1
Brand: onsemi
SKU: 863-NTH4L018N075SC1
Price: 23.37 USD
Availability: OutOfStock

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Mouser No:

863-NTH4L018N075SC1

Mfr. No:

NTH4L018N075SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 750V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTH4L018N075SC1 Datasheet

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Availability

Stock:: 0

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On Order:: 900

Expected 27/02/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$23.37	$23.37
	$16.90	$169.00
	$15.76	$1,576.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	99 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	262 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	500 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	9.6 ns
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	24 ns
Series:	NTH4L018N075SC1
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	24 ns

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Datasheet

NTH4L018N075SC1 Datasheet

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NTH4L018N075SC1 N-Channel SiC MOSFET

onsemi NTH4L018N075SC1 N-Channel Silicon Carbide (SiC) MOSFET is a low ON resistance, 750V M2 EliteSiC MOSFET available in a compact TO247-4L package. This SiC MOSFET supports high-speed switching with low capacitance (C_oss = 365pF), zero reverse recovery current of the body diode, and Kelvin source configuration. The NTH4L018N075SC1 SiC MOSFET features Q_G(tot) = 262nC ultra-low gate charge, -8V/+22V gate-to-source voltage, and 500W power dissipation. Typical applications include solar inverters, EV charging stations, energy storage systems, Uninterruptible Power Supplies (UPS), and Switch Mode Power Supplies (SMPS).